Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO=1500V(Min) • High Switching Speed • Low Saturation Voltage • Built-in Damper Diod APPLICATIONS • Horizontal output applications for medium resolution displays & color TV

文件：130.65 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Muting Circuit Applications

Muting Circuit Applications Features · Very small-sized package permitting 2SC4919- applied sets to be made smaller and slimmer. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Small ON resistance.

文件：80.46 Kbytes 页数：3 Pages

SANYO

三洋

Muting Circuit Applications

Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

文件：54.58 Kbytes 页数：4 Pages

SANYO

三洋

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=4.7kΩ, R2=4.7kΩ). • Very small-sized package permitting 2SC4920-applied sets to be made smaller and slimmer. • Small ON resistance.

文件：61.89 Kbytes 页数：2 Pages

SANYO

三洋

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features · High DC current gain. · On-chip bias resistance (R1=10kΩ, R2=10kΩ). · Very small-sized package permitting 2SC4921-applied sets to be made smaller and slimmer. · Small ON resistance.

文件：62.26 Kbytes 页数：2 Pages

SANYO

三洋

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=47kΩ, R2=47kΩ). • Very small-sized package permitting 2SC4922-applied sets to be made smaller and slimmer. • Small ON resistance.

文件：62.63 Kbytes 页数：2 Pages

SANYO

三洋

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

文件：79.34 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

文件：79.26 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications

文件：248.65 Kbytes 页数：2 Pages

ISC

无锡固电