Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Very high-definition CRT display ·Horizontal deflection output applications

文件：196.75 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.89 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：97.98 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：97.98 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Built-in damper diode • High breakdown voltage APPLICATIONS • TV/Character display horizontal deflection output applications

文件：237.44 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Built-in damper diode • High breakdown voltage APPLICATIONS • TV/Character display horizontal deflection output applications

文件：228.69 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Triple Diffused

Features • High breakdown voltage VCES = 1500 V • Built-in damper diode type • Isolated package TO-3PFM Application TV/character display horizontal deflection output

文件：27.98 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Character Display Horizontal Deflection Output

Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 15 A • Suitable for large size CRT Display Application Character Display Horizontal Deflection Output

文件：20.62 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) • High Switching Speed APPLICATIONS • Designed for character display horizontal deflection output applications.

文件：122.67 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • High speed switching • High breakdown voltage,high current APPLICATIONS • Character display horizontal deflection output applications

文件：116.54 Kbytes 页数：3 Pages

SAVANTIC