HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V, 7A)

文件：39.52 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply

文件：115.47 Kbytes 页数：3 Pages

SAVANTIC

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Muting Circuits

Muting Circuits Features · Small-sized package permitting 2SC4852-applied sets to be made smaller and slimer. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Small ON resistance.

文件：79.42 Kbytes 页数：3 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Small output capacitance. ● Low collector-to-emitter saturation voltage. ● Small ON resistance.

文件：36.97 Kbytes 页数：1 Pages

KEXIN

科信电子

Muting Circuits?

Muting Circuits Features • Small-sized package permitting 2SC4852-applied sets to be made smaller and slimer. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Small ON resistance.

文件：80.09 Kbytes 页数：3 Pages

SANYO

三洋

Low-Voltage, Low-Current High-Frequency Amp Applications

Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : |S21e|2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).

文件：111.44 Kbytes 页数：4 Pages

SANYO

三洋

RF Transistor Low-voltage, low-current operation

Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : |S21e|2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz)

文件：355.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Low-Voltage, Low-Current High-Frequency Amplifier Applications

Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz)

文件：60.67 Kbytes 页数：5 Pages

SANYO

三洋

RF Transistor Low-voltage, low-current operation

Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : |S21e|2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz)

文件：355.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体