Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=4.7kΩ, R2=4.7kΩ). • Very small-sized package permitting 2SC4920-applied sets to be made smaller and slimmer. • Small ON resistance.

文件：61.89 Kbytes 页数：2 Pages

SANYO

三洋

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features · High DC current gain. · On-chip bias resistance (R1=10kΩ, R2=10kΩ). · Very small-sized package permitting 2SC4921-applied sets to be made smaller and slimmer. · Small ON resistance.

文件：62.26 Kbytes 页数：2 Pages

SANYO

三洋

Muting Circuit, Driver Applications

Muting Circuit, Driver Applications Features • High DC current gain. • On-chip bias resistance (R1=47kΩ, R2=47kΩ). • Very small-sized package permitting 2SC4922-applied sets to be made smaller and slimmer. • Small ON resistance.

文件：62.63 Kbytes 页数：2 Pages

SANYO

三洋

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

文件：79.34 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Definition CRT Display Horizontal Deflection Output Applications????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf typ=100ns). • High reliability (Adoption of HVP process). • High breakdown voltage (VCBO=1500V). • Adoption of MBIT process.

文件：79.26 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications

文件：248.65 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Very high-definition CRT display ·Horizontal deflection output applications

文件：196.75 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：97.98 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT= 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.89 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：97.98 Kbytes 页数：8 Pages

RENESAS

瑞萨