HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity.

文件：187.68 Kbytes 页数：4 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR P/b Lead(Pb)-Free

文件：399.19 Kbytes 页数：3 Pages

WEITRON

丝印：CN；Package：SOT-89；NPN Epitaxial Planar Silicon Transistor

FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearlity.

文件：185.92 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(NPN)

FEATURES Small Flat Package High Breakdown Voltage Excellent hFE Linearity

文件：340.45 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent hFE Linearity

文件：1.18547 Mbytes 页数：3 Pages

JIANGSU

长电科技

High-Voltage Driver Applications

Features ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearlity.

文件：361.76 Kbytes 页数：3 Pages

KEXIN

科信电子

NPN Plastic Encapsulated Transistor

FEATURES Small Flat Package High Breakdown Voltage Excellent hFE Linearity

文件：77.33 Kbytes 页数：1 Pages

SECOS

喜可士

丝印：CN；Package：SOT-89；NPN Epitaxial Planar Silicon Transistor

FEATURES High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity.

文件：490.65 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：102.19 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

High Breakdown Voltage Adoption of MBIT Process

● Features High Breakdown Voltage Adoption of MBIT Process ● Excellent hFE linearlity.

文件：1.30766 Mbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

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