High-voltage Amplifier Transistor

■ Features ● High Breakdown Voltage ● Complementary to 2SA1514K

文件：36.85 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

文件：1.253 Mbytes 页数：8 Pages

ROHM

罗姆

NPN 50mA 120V High Voltage Amplifier transistors

Features 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2SA1579 (UMT3) / 2SA1514K (SMT3) 3) Complex transistors : IMX8 (SMT6) 4) Lead Free/RoHS Compliant.

文件：1.253 Mbytes 页数：8 Pages

ROHM

罗姆

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to 2SA1516

文件：48.79 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Triple-Diffused Junction Mesa Type

[Panasonic] Silicon NPN Triple-Diffusion Junction Mesa Type High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of hFE

文件：65.77 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • High Speed Switching • High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) • Good Linearity of hFE APPLICATIONS • Designed for high speed switching applications

文件：239.56 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Applications(with Bias Resistance)

Switching Applications (With Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Application · Switching circuits, inverters circuits, inferface circuits, driver circuits.

文件：58.85 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：58.75 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：59.76 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Swicthing circuits, inverter circuits, interface circuits, dirver circuits.

文件：61.31 Kbytes 页数：2 Pages

SANYO

三洋