HIGH CURRENT SWITCHING APPLICATIONS

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

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TOSHIBA

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High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

文件：146.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Power Switching Applications

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

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isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A • Fast Switching Speed • Complement to Type 2SA1452A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high current switchin

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ISC

无锡固电

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

文件：146.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Power Switching Applications

High-Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A

文件：170.82 Kbytes 页数：5 Pages

TOSHIBA

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Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 12 A \nCollector-emitter voltage VCEO 80 V ;

Toshiba

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