Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency poweramplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier.

文件：249.11 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C3421；NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage

文件：151.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications

文件：120.53 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN transistor in a TO-126F Plastic Package.

文件：1.01875 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Power transistor for high-speed switching applications

Application Scope：Driver\nPolarity：NPN\nComplementary Product：2SA1358\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1 A \nCollector power dissipation PC 10 W \nCollector-emitter voltage VCEO 120 V ;

Toshiba

东芝

Transistor

Semiteh

双极晶体管

BlueRocket

蓝箭电子

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications

文件：120.53 Kbytes 页数：4 Pages

TOSHIBA

东芝