Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP

Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process

文件：79.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 160V 0.7A 3NP

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 160V 0.7A 3NP

ONSEMI

安森美半导体

Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP

Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process

文件：79.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP

Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process

文件：79.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP

Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process

文件：79.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体