NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters a

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NEC

瑞萨

The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications.

DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications.

文件：28.33 Kbytes 页数：1 Pages

ASI

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad. FEATURES • Low Noise and High Gain. f = 200 MHz, 500 MHz NF: 2.3 dB, 2.4 dB |S21e|: 20 dB, 12.5 dB • Large PT in Small Packa

文件：103.81 Kbytes 页数：8 Pages

NEC

瑞萨

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 2.3 dB TYP. ; ︱ S21e︱ 2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱ S21e︱ 2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS • Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band.

文件：241.46 Kbytes 页数：5 Pages

ISC

无锡固电

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

文件：207.52 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier

FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959

文件：168.28 Kbytes 页数：4 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier

FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959

文件：168.28 Kbytes 页数：4 Pages

NEC

瑞萨

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • High breakdown voltage.

文件：129.539 Kbytes 页数：4 Pages

SANYO

三洋

SILICON HIFH SPEED POWER TRANSISTOR

Features ◆ High voltage ◆ Ultra-fast switching ◆ Large safe operating arearae Applications ◆ Switching regulators ◆ Motor controls ◆ Ultrasonic oscillators ◆ Class C and D amplifiers ◆ Deflection circuits

文件：527.39 Kbytes 页数：14 Pages

FUJITSU

富士通

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

文件：128.759 Kbytes 页数：3 Pages

ISC

无锡固电