Silicon NPN Triple Diffused

Application High voltage, high speed and high power switching

文件：40.52 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltatge • High speed APPLICATIONS • For high voltatge ,high speed and power switching applications

文件：128.34 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 800V(Min) • Collector-Emitter Saturation Voltage- :VCE(sat)=1.0V(Max)@lc=2A • Fast Switching Speed APPLICATIONS • Designed for high-voltage, high-speed and high power switching applications.

文件：129.669 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltatge • High speed APPLICATIONS • For high voltatge ,high speed and power switching applications

文件：115.32 Kbytes 页数：3 Pages

SAVANTIC

TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Storobo Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)

文件：172.44 Kbytes 页数：3 Pages

TOSHIBA

东芝

Medium Power Amplifier Applications

■ Features ● Low saturation voltage ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1314

文件：339.42 Kbytes 页数：2 Pages

KEXIN

科信电子

TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225

文件：139.19 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transistor frequency

文件：383.11 Kbytes 页数：4 Pages

ISC

无锡固电