NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2901 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance.

文件：159.49 Kbytes 页数：3 Pages

NEC

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls

文件：127.87 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls

文件：107.91 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System

文件：33.99 Kbytes 页数：1 Pages

ASI

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATIONS Output stage of transmitter in HF band SSB mobile radio sets.

文件：132.68 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2905 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATION For output stage of 35 - 40W power amplifiers in UHF band.

文件：141.89 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2905 is designed for high power amplifier applications in UHF band. FEATURES: • Emitter Ballasted construction. • PG = 4.8 dB at 45 W/520 MHz • Omnigold™ Metalization System • Common Emitter

文件：18.54 Kbytes 页数：1 Pages

ASI

POWER TRANSISTORS(5.0A,100V,50W)

文件：120.97 Kbytes 页数：3 Pages

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector saturation voltage APPLICATIONS • For use in power amplifier and switching circuits applications

文件：223.69 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=3A, IB=0.3A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

文件：309.44 Kbytes 页数：2 Pages

ISC

无锡固电