2SC2881-Y

NPN Silicon Power Transistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •WithSOT-89package •Poweramplifierapplications •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix

2SC2881-Y

Marking：CY*；Package：SOT-89；NPN Transistors

■Features ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201

2SC2881-Y

NPN Transistors

2SC2881-Y(TE12L,ZC

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PB-F POWER TRANSISTOR PW-MINI PC

Toshiba Semiconductor and Storage

2SC2881

NPNSiliconEpitaxialPlanarTransistor

FEATURES Highvoltage:VCEO=120V Hightransitionfrequency;fT=120MHz. PC=500mW. Complementsthe2SA1201. APPLICATIONS Powerandvoltageamplifierapplication.

2SC2881

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC2881

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features SiliconNPNtransistorinaSOT-89PlasticPackage. Applications Poweramplifierapplications.

2SC2881

SOT-89Plastic-EncapsulateTransistors

FEATURES ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage APPLICATIONS ●PowerAmplifierandVoltageAmplifier

2SC2881

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:800mA Collector-basevoltage V(BR)CBO:120V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2881

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltage:VCEO=120V ●Hightransitionfrequency;fT=120MHz. ●PC=500mW. ●Complementsthe2SA1201. APPLICATIONS ●Powerandvoltageamplifierapplication.