2SC2873Y

Power Amplifier Applications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1213

2SC2873Y

GENERAL PURPOSE TRANSISTOR 500mW 1.5A 32V TRANSISTOR

2SC2873Y-G

General Purpose Transistor

Features -Smallflatpackage -Highspeedswitchingtime. -Lowcollector-emittersaturationvoltage.

2SC2873

SiliconNPNEpitaxialTransistor

FEATURES Smallflatpackage. LowsaturationvoltageVCE(sat)=-0.5V Highspeedswitchingtime Complementaryto2SA1213 APPLICATIONS Poweramplifier PowerSwitching

2SC2873

SOT-89Plastic-encapsulateNPNTransistors

■Features ●SmallFlatPackage ●HighSpeedSwitchingTime ●LowCollector-emittersaturationvoltage ●Complementaryto2SA1213

2SC2873

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1213

2SC2873

PowerAmplifierApplicationsPowerSwitchingApplications

2SC2873

SiliconPNPEpitaxialType

■Features ●SmallFlatPackage ●HighSpeedSwitchingTime ●LowCollector-emittersaturationvoltage ●Complementaryto2SA1213

2SC2873

TRANSISTOR(NPN)

FEATURES ●SmallFlatPackage ●HighSpeedSwitchingTime ●LowCollector-emittersaturationvoltage ●Complementaryto2SA1213 APPLICATIONS ●PowerAmplifierandSwitching

2SC2873

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Lowsaturationvoltage ●Highspeedswitchingtime ●Complementaryto2SA1213