For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：245.77 Kbytes 页数：4 Pages

TOSHIBA

东芝

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Emitter-Base Voltage ● Low On Resistance

文件：978.79 Kbytes 页数：4 Pages

JIANGSU

长电科技

0.3A, 50V NPN Plastic Encapsulated Transistor

FEATURES • Low On Resistance • High Emitter-Base Voltage • High Reverse hFE>30(typ.) VCE= -2V, IC= -4mA.

文件：288.5 Kbytes 页数：2 Pages

SECOS

喜可士

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：221.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：245.77 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：221.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up to 28 MHz. FEATURES: • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

文件：68.06 Kbytes 页数：1 Pages

ASI

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

文件：134.74 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

文件：189.81 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：MO；Package：SOT-89；Power Amplifier Applications Power Switching Applications

文件：163.62 Kbytes 页数：5 Pages

TOSHIBA

东芝