SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

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TOSHIBA

东芝

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up to 28 MHz. FEATURES: • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

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ASI

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

文件：134.74 Kbytes 页数：2 Pages

TOSHIBA

东芝

T0-220

MIT

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TO-3P

FUJI

富士通

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