丝印：MY；Package：SOT-89；NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

文件：562.58 Kbytes 页数：3 Pages

YFWDIODE

佑风微

General Purpose Transistor

Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.

文件：175.76 Kbytes 页数：4 Pages

COMCHIP

典琦

TRANSISTOR

3SK121 datasheet pdf

文件：73.84 Kbytes 页数：1 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

文件：120.54 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

文件：103.85 Kbytes 页数：3 Pages

SAVANTIC

TRANSISTOR (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：172.42 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：221.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：245.77 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：221.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

文件：245.77 Kbytes 页数：4 Pages

TOSHIBA

东芝