Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain- : Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications.

文件：207.93 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • Low noise figure: NF = 3.5dB (max) (f = 1 MHz).

文件：36.56 Kbytes 页数：1 Pages

KEXIN

科信电子

HIGH FREQUENCY AMPLIFIER APPLICATIONS

High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz)

文件：207.83 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT process)

文件：607.8 Kbytes 页数：5 Pages

TOSHIBA

东芝

Trans RF BJT NPN 30V 0.1A 3-Pin S-Mini

NJS

Silicon NPN Epitaxial Type (PCT process)

文件：607.8 Kbytes 页数：5 Pages

TOSHIBA

东芝