丝印：CP；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

文件：436.74 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● High ICMax.ICMax. = 0.5mA ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1036

文件：1.58818 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

文件：230.29 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：CP/CQ/CR；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：1.09277 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

文件：1.56019 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Plastic-Encapsulate Transistors

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

文件：189.66 Kbytes 页数：2 Pages

HOTTECH

合科泰

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

文件：1.68189 Mbytes 页数：5 Pages

WEITRON

丝印：CQ；Package：SOT-346；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

文件：73.77 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：CQ；Package：SOT-346；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

文件：78.81 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SA1036K. Applications Medium power amplifier applications.

文件：730.02 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子