丝印：TR；Package：SOT-23；Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

文件：236.91 Kbytes 页数：5 Pages

Panasonic

松下

丝印：TR；Package：SOT-23；Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac

文件：51.33 Kbytes 页数：3 Pages

Panasonic

松下

丝印：TR；Package：SOT-23；Silicon NPN epitaxial planer type

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

文件：50.17 Kbytes 页数：3 Pages

Panasonic

松下

Silicon PNP Epitaxial Planar Type

Features Low noise voltage NV. High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：37.56 Kbytes 页数：1 Pages

KEXIN

科信电子

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

文件：236.91 Kbytes 页数：5 Pages

Panasonic

松下

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

文件：236.91 Kbytes 页数：5 Pages

Panasonic

松下

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

文件：236.91 Kbytes 页数：5 Pages

Panasonic

松下

NPN SILICON TRANSISTOR

文件：29.95 Kbytes 页数：1 Pages

NEC

瑞萨

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.

文件：76.6 Kbytes 页数：2 Pages

ISC

无锡固电

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● High ICMax.ICMax. = 0.5mA ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1036

文件：1.58818 Mbytes 页数：4 Pages

JIANGSU

长电科技