Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor

文件：41.57 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives

文件：359.42 Kbytes 页数：4 Pages

PANJIT

強茂

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：129.6 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

文件：298.08 Kbytes 页数：6 Pages

PANJIT

強茂

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

文件：298.08 Kbytes 页数：6 Pages

PANJIT

強茂

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

文件：298.08 Kbytes 页数：6 Pages

PANJIT

強茂

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

文件：846.83 Kbytes 页数：4 Pages

YEASHIN

亚昕科技

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power

文件：97.35 Kbytes 页数：3 Pages

CHENMKO

力勤

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

文件：846.83 Kbytes 页数：4 Pages

YEASHIN

亚昕科技

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

文件：846.83 Kbytes 页数：4 Pages

YEASHIN

亚昕科技