isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：305.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Complement to type 2SA969 • High breakdown votage APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

文件：116.61 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise, high DC current gain, high breakdown voltage Applications Low noise audio amplifier applications.

文件：752.65 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed tolower noise figure in the region of low signal source impedance, and tolower the pulse noise. This is recommended for the first stages of Equalizer amplifiers

文件：226.3 Kbytes 页数：3 Pages

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed tolower noise figure in the region of low signal source impedance, and tolower the pulse noise. This is recommended for the first stages of Equalizer amplifiers

文件：314.88 Kbytes 页数：5 Pages

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed tolower noise figure in the region of low signal source impedance, and tolower the pulse noise. This is recommended for the first stages of Equalizer amplifiers

文件：314.88 Kbytes 页数：5 Pages

TOSHIBA

东芝

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

POWER APLIFIER APPLICATIONS. COLOR TV SOUND OUTPUT APPLICATIONS. FEATURES Recommended for Sound Output Stage in Line Operated TV. High Voltage : VCEO = 300V

文件：112.19 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION · High Breakdown Voltage : V(BR)CBO= 300V(Min) · High Current-Gain—Bandwidth Product : fT= 20MHz(Min)@IC= 20mA APPLICATIONS · Power amplifier applications · Color TV sound output applications · Recommended for sound output stage in line operated TV

文件：245.82 Kbytes 页数：2 Pages

ISC

无锡固电

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

文件：81.35 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEo(sus)= 400V (Min) • High Switching Speed APPLICATIONS • Power switching • Power amplification • Power driver

文件：216.18 Kbytes 页数：2 Pages

ISC

无锡固电