HIGH POWER SWITCHING APPLICATIONS.

FEATURES : High Voltage: VCEO 400V (Min.)(2SC2204) VCEO=300V (Min.) (2SC2220) VCBO-800V (Min.)(2SC2204) VCBO=500V (Min.)(2SC2220) High Speed Switching : tf=0.7us (Typ.)

文件：93.99 Kbytes 页数：1 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circ

文件：53.53 Kbytes 页数：3 Pages

PANASONIC

松下

For low-frequency power amplification

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 ■ Features • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963

文件：71.94 Kbytes 页数：4 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

文件：249.49 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • High Collector Power Dissipation • Complement to Type 2SA963 APPLICATIONS • Designed for low frequency power amplification.

文件：128.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA963 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

文件：129.57 Kbytes 页数：4 Pages

SAVANTIC

2SC2210

2SC2210

文件：73.3 Kbytes 页数：1 Pages

SANYO

三洋

TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of hFE.

文件：176.45 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 300m Watts of Power Dissipation. • Collector-current : ICM=50mA • Collector-base Voltage:V(BR)CBO= 50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs

文件：203.09 Kbytes 页数：2 Pages

MCC

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier Dissipation NPN Silicon

文件：413.68 Kbytes 页数：3 Pages

JIANGSU

长电科技