TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

文件：180.73 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Type (PCT Process)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

文件：133.12 Kbytes 页数：5 Pages

TOSHIBA

东芝

TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High voltage: VCEO=180V(2SC2230A) ● High DC Current Gain

文件：3.69804 Mbytes 页数：3 Pages

JIANGSU

长电科技

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High voltage: VCEO=180V(2SC2230A) ● High DC Current Gain

文件：4.4473 Mbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE • High voltage: VCEO=180V(2SC2230A) • High DC Current Gain

文件：286.67 Kbytes 页数：3 Pages

KOOCHIN

灏展电子

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, high DC current gain. Applications High voltage general amplifier, color TV class B sound output applications

文件：869.95 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN Triple Diffused Type (PCT Process)

High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO= 180 V (2SC2230A) • High DC current gain

文件：133.12 Kbytes 页数：5 Pages

TOSHIBA

东芝

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS FEATURES: High Voltage : VCEO = 180V (2SC2231A).

文件：122.12 Kbytes 页数：3 Pages

TOSHIBA

东芝

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS FEATURES: High Voltage : VCEO = 180V (2SC2231A).

文件：122.12 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-:VCEO= 60V(Min) ·DC Current Gain-: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application

文件：245.45 Kbytes 页数：2 Pages

ISC

无锡固电