isc Silicon NPN Pow Transistor

DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching applications • Driver stage audio amplifier applications • Black and white TV

文件：255.29 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=150V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 10mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：315.81 Kbytes 页数：3 Pages

ISC

无锡固电

T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Transition Frequency

文件：4.55188 Mbytes 页数：5 Pages

JIANGSU

长电科技

50mA , 200V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage • High Transition Frequency

文件：356.7 Kbytes 页数：2 Pages

SECOS

喜可士

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.55 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High breakdown voltage, low output capacitance, high fT. Applications TV video output, high voltage switching and driver stage of audio amplifier applications.

文件：897.03 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE • High voltage: VCEO=180V(2SC2230A) • High DC Current Gain

文件：286.67 Kbytes 页数：3 Pages

KOOCHIN

灏展电子

Silicon NPN transistor in a TO-92LM Plastic Package

Description Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, high DC current gain. Applications High voltage general amplifier, color TV class B sound output applications

文件：869.95 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.73 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max)@ IC=50mA APPLICATIONS · Switching regulator and high voltage switching applications · High speed DC-DC converter applications

文件：249.82 Kbytes 页数：2 Pages

ISC

无锡固电