NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in HF band Mobile radio applications)

DESCRIPTION 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band radio applications. FEATURES ● High power gain: Gpe ≦≧≤≥ 13dB @VCC = 12V, Po = 0.3W, f = 27MHz ● Emitter ballasted construction, gold metallization for good performance ● TO-9

文件：126.08 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

HIGH FREQUENCY POWER AMPLIFIER

文件：43.32 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH FREQUENCY POWER AMPLIFIER

SILICON NPN EXITAXIAL HIGH FREQUENCY POWER AMPLIFIER

文件：38.8 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band Mobile radio applications)

DESCRIPTION 2SC2094 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

文件：149.09 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

SILICON NPN EPITAXIAL PLANAR

文件：139.31 Kbytes 页数：2 Pages

TOSHIBA

东芝

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

文件：142.14 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

文件：478.89 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes 页数：2 Pages

MCC

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes 页数：2 Pages

MCC

NPN Silicon Plastic-Encapsulate Transistor

文件：309.6 Kbytes 页数：2 Pages

MCC