丝印：ST2SC1815YB；Package：TO-92；Low Frequency Amplifier NPN Epitaxial Silicon Transistor

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FUTUREWAFER

General Purpose Bipolar

FutureWafer

未来芯

NPN Transistor Epitaxial Planar Transistor

Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.

文件：377.65 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon Epitaxial Transistor

Features • Halogen free available upon request by adding suffix -HF • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking :

文件：389.15 Kbytes 页数：3 Pages

MCC

NPN Silicon Epitaxial Transistor

文件：480.47 Kbytes 页数：3 Pages

MCC