2SC1008-R

NPN Silicon Epitaxial Transistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •GeneralPurposeSwitchingandAmplification •Capableof0.8WattsofPowerDissipation. •Collector-current0.

2SC1008-R

NPN Silicon Epitaxial Transistor

2SC1008-R_13

NPN Silicon Epitaxial Transistor

2SC1008-R-AP

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 0.7A TO92

2SC1008

NPNPlastic-EncapsulateTransistor

NPNPlastic-EncapsulateTransistor P/bLead(Pb)-Free

2SC1008

NPNPlasticEncapsulatedTransistor

FEATURES GeneralPurposeSwitchingandAmplification.

2SC1008

MediumPowerAmplifiersandSwitches

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC1008

TRANSISTORNPN

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC1008

TO-92Plastic-EncapsulateTransistors

FEATURES GeneralPurposeSwitchingandAmplification

2SC1008

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.8W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃