TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222.

文件：173.44 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：297.96 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件：165.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件：169.83 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode\nApplication Scope：Switching / Power amplifier\nPolarity：PNP\nComplementary Product：2SD1222\nRoHS Compatible Product(s) (#)：Available Collector Current IC -3 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -40 V ;

Toshiba

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：297.96 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

文件：165.76 Kbytes 页数：5 Pages

TOSHIBA

东芝