TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Application • Low collector saturation voltage : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221

文件：150.53 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.8 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Epitaxial

■ Features ● Low collector saturation voltage ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SD1221

文件：39.41 Kbytes 页数：1 Pages

KEXIN

科信电子

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier Application

文件：160.7 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier Application

文件：164.49 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Application Scope：Low frequency power amplifier\nPolarity：PNP\nComplementary Product：2SD1221\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -3 A \nCollector power dissipation PC 20 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -60 V ;

Toshiba

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.8 Kbytes 页数：2 Pages

ISC

无锡固电