Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity. • Complement to type 2SD1212 APPLICATIONS • Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. • High-speed switching appli

文件：224.46 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage • Large current capacity. • Complement to type 2SD1212 APPLICATIONS • Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. • High-speed switching appli

文件：160.79 Kbytes 页数：4 Pages

SAVANTIC

30V/20A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Large current switching of relay drivers, high-speed inverters, converters.

文件：100.02 Kbytes 页数：3 Pages

SANYO

三洋

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to SD1220

文件：170.54 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.53 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.48 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.53 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.48 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电