Silicon PNP epitaxial planar type(For power amplification)

For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c

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Panasonic

松下

Silicon PNP Epitaxial Planar Type

Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat).

文件：39.32 Kbytes 页数：1 Pages

KEXIN

科信电子

For Power Amplification

文件：75.8 Kbytes 页数：3 Pages

Panasonic

松下

PNP Transistors

文件：1.17782 Mbytes 页数：2 Pages

KEXIN

科信电子

PNP Transistors

文件：1.17782 Mbytes 页数：2 Pages

KEXIN

科信电子

PNP Transistors

文件：1.17782 Mbytes 页数：2 Pages

KEXIN

科信电子