isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25c • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications.

文件：271.62 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- : V(BR,CEO= -60V(Min) • Collector Power Dissipation- : Pc= 30W@ Tc= 25°C • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A • Complement to Type 2SD1354 APPLICATIONS • Designed for audio frequency power amplifier applications.

文件：130.93 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage APPLICATIONS • Audio and general purpose

文件：90.17 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：91.76 Kbytes 页数：3 Pages

SAVANTIC