isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD768 APPLICATIONS ·Medium speed and po

文件：259.86 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Epitaxial

Application Medium speed and power switching complementary pair with 2SD768(K)

文件：37.16 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

文件：151.13 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon PNP Darlington Power Transistor

文件：76.53 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington PNP 120V 6A 3-Pin(3+Tab) TO-220AB

NJS

Silicon PNP Epitaxial

Application Medium speed and power switching complementary pair with 2SD768(K)

文件：37.16 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SD768K ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications

文件：192.07 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件：133.63 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：135.29 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Epitaxial

文件：151.13 Kbytes 页数：7 Pages

RENESAS

瑞萨