High Voltage / High Power / Small Signal Transistors

Semi Tech

海晨启半导体

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • High Power Dissipation- : Pc= 150W(Max)@Tc=25°C • Complement to Type 2SD665 APPLICATIONS • Designed for power amplifier applications. • Recommended for 200W high-fidelity audio frequency amplifier output stage.

文件：129.31 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

文件：133.38 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

文件：158.82 Kbytes 页数：3 Pages

JMNIC

锦美电子