2SB1690

General purpose amplification(-12V, -2A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat):max.−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver

2SB1690K

General purpose amplification (-12V, -2A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≤−180mV atIC=−1A/IB=−50mA Applications Lowfrequencyamplifier Deiver

2SB1691

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit

2SB1691WL

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=–1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=–0.3Vmax.(atIC/IB=–0.5A/–0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwit

2SB1693

Silicon PNP epitaxial planar type

SiliconPNPepitaxialplanartype Forgeneralamplification ■Features •LargecollectorcurrentIC •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

2SB1694

General purpose amplification (-30V, -1A)

Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦-380mVatIC=-500mA/IB=-25mA 3)Complementsthe2SD2656. Application LOWFREQUENCYAMPLIFIER

2SB1694

PNP Gneral Purpose Transistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain •HighCollectorCurrent •LowCollector-emitterSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavail

2SB1694

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighCollectorCurrent ●LowCollector-emitterSaturationVoltage APPLICATIONS ●LowFrequencyAmplifierDrive

2SB1694

SOT-323 Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain HighCollectorCurrent LowCollector-emitterSaturationVoltage APPLICATIONS LowFrequencyAmplifierDrive

2SB1695

Low frequency amplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver

2SB1695K

Low frequency amplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVAtIC=−1A/IB=−50mA Application Lowfrequencyamplifier Driver

2SB1697

Low Frequency Amplifier (-12V, -2A)

Features LowVCE(sat) VCE(sat)≤−180mV (IC/IB=−1A/−50mA)

2SB1698

Low frequency amplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

2SB1698

Low frequency amplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

2SB1698T100

Low frequency amplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤−370mVatIC=−1A/IB=−50mA Application LowfrequencyamplifierDriver

2SB1699

Silicon PNP epitaxial planar type

SiliconPNPepitaxialplanartype Forpoweramplification ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

2SB1690

General purpose amplification(−12V, −2A)

2SB1690

General purpose amplification(??2V, ??A)

2SB1690_05

General purpose amplification(??2V, ??A)

2SB1690_1

General purpose amplification(−12V, −2A)