丝印：FV；Package：TSMT3；General purpose amplification(-12V, -2A)

Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver

文件：75.4 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T146；Package：SMT3；General purpose amplification (-12V, -2A)

Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat)≤ −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver

文件：68.8 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit

文件：77.8 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair wit

文件：77.8 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For general amplification ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

文件：82.55 Kbytes 页数：3 Pages

PANASONIC

松下

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain • High Collector Current • Low Collector-emitter Saturation Voltage • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free avail

文件：313.49 Kbytes 页数：2 Pages

MCC

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current ● Low Collector-emitter Saturation Voltage APPLICATIONS ● Low Frequency Amplifier Drive

文件：604.12 Kbytes 页数：3 Pages

JIANGSU

长电科技

丝印：ES；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Collector Current Low Collector-emitter Saturation Voltage APPLICATIONS Low Frequency Amplifier Drive

文件：1.47294 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：ES；Package：SOT-323；General purpose amplification (-30V, -1A)

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦-380mV at IC=-500mA/IB=-25mA 3) Complements the 2SD2656. Application LOW FREQUENCY AMPLIFIER

文件：67.94 Kbytes 页数：2 Pages

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA Application Low frequency amplifier Driver

文件：89.01 Kbytes 页数：3 Pages

ROHM

罗姆