2SB1574-R说明书PDF资料批发采购科信电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SB1574-R	文件：454.95 Kbytes Page：1 Pages	PNP Transistors 文件：454.95 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SB1574-S	文件：454.95 Kbytes Page：1 Pages	PNP Transistors 文件：454.95 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SB1574	文件：279.95 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：279.95 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SB1574	文件：299 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：299 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SB1574	文件：39.49 Kbytes Page：1 Pages	Silicon PNP Epitaxial Planar Type Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC. 文件：39.49 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN

更多2SB1574-R供应商更新时间2026-1-26 9:30:00