isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A • Complement to Type 2SD2401 • Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS • Designed for audi

文件：268.92 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose

文件：24.99 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2402

文件：52.95 Kbytes 页数：2 Pages

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402

文件：41.68 Kbytes 页数：4 Pages

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403

文件：43.73 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2403

文件：53.97 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PNP Epitaxial Planar Type

Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC.

文件：39.49 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-frequency output amplification)

For low-frequency output amplification ■ Features ● Possible to solder radiation fin directly to printed cicuit boad ● Type with universal characteristics ● Collector breakdown voltage: VCBO/VCEO = –50V ● Collector current: IC = –2A

文件：28.17 Kbytes 页数：1 Pages

PANASONIC

松下