TRANSISTOR (SWITCHING APPLICATIONS)

Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

文件：159.02 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) B ·Complement to Type 2SD2241 APPLICATIONS ·H

文件：242.86 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA) • Complement to Type 2SD2241 APPLICATIONS • High power switching

文件：76.08 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

文件：213.65 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP triple diffusion planer type(For power switching)

Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057

文件：41.28 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP Power Transistors

文件：215.26 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Epitaxial Type

文件：137.89 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial Type

文件：137.89 Kbytes 页数：4 Pages

TOSHIBA

东芝

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：T105；Package：MRT；TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes 页数：2 Pages

ROHM

罗姆