2SB1424

LOWVCE(SAT)TRANSISTOR

LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)

2SB1424

TRANSISTOR(PNP)

FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150

2SB1424

PNPSiliconMediumPowerTransistor

FEATURES Powerdissipation PCM:600mWTemp.=25°C Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C

2SB1424

LowVCE(sat)Transistor

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

2SB1424

Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SB1424

LowVCE(sat)Transistor(−20V,−3A)

2SB1424

EpitaxialPlanarPNPTransistors

EpitaxialPlanarPNPTransistors P/bLead(Pb)-Free

2SB1424

LowVce(sat)Transistor(-20V,-3A)

Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S.

2SB1424

PNPTransistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

2SB1424

LowVCE(sat)Transistor(-20V,-3A)

FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD2150. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching.