2SB1386-R

Marking：BHR*；Package：SOT-89；PNP Transistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

2SB1386-R

PNP Silicon Epitaxial Transistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

2SB1386-R

PNP Transistors

2SB1386-R

PNP Silicon Epitaxial Transistors

2SB1386-R-AB3-B-R

LOW FREQUENCY PNP TRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

2SB1386-R-AB3-C-R

LOW FREQUENCY PNP TRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

2SB1386-R-AB3-E-R

LOW FREQUENCY PNP TRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

2SB1386

LowFrequencyTransistor

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

2SB1386

Lowfrequencytransistor(−20V,−5A)

2SB1386

LOWFREQUENCYPNPTRANSISTOR

■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)