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2SB1216

High-Current Switching Applications

■Features ●Lowcollector-to-emittersaturationvoltage. ●HighcurrentandhighfT ●Fastswitchingtime. ●Complementaryto2SD1816

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SB1216

High-Current Switching Applications

High-CurrentSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage. •GoodlinearityofhFE. •Smallandslimpackagefacilitatingcompactnessofsets. •HighfT. •Fastswitchingtime. Applications •Suitableforrelaydrivers,high-speedinverters, convert

SANYOSanyo

三洋三洋电机株式会社

2SB1216

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216

HIGH CURRENT SWITCHIG APPLICATIONS

■FEATURES *Lowcollector-to-emittersaturationvoltage *GoodlinearityofhFE *Smallandslimpackagefacilitatingcompactnessofsets. *HighfT *Fastswitchingspeed *Complementthe2SD1816

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2SB1216

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216

isc Silicon PNP Power Transistor

DESCRIPTION •ExcellentlinearityofhFE •Smallandslimpackagefacilitatingcompactnessofsets •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATION

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SB1216

High-Current Switching Applications

SANYOSanyo

三洋三洋电机株式会社

2SB1216G-X-TF3-T

HIGH CURRENT SWITCHIG APPLICATIONS

■FEATURES *Lowcollector-to-emittersaturationvoltage *GoodlinearityofhFE *Smallandslimpackagefacilitatingcompactnessofsets. *HighfT *Fastswitchingspeed *Complementthe2SD1816

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2SB1216L-X-TF3-T

HIGH CURRENT SWITCHIG APPLICATIONS

■FEATURES *Lowcollector-to-emittersaturationvoltage *GoodlinearityofhFE *Smallandslimpackagefacilitatingcompactnessofsets. *HighfT *Fastswitchingspeed *Complementthe2SD1816

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2SB1216S-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-TL-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-TL-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-TL-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216S-TL-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

晶体管资料

  • 型号:

    2SB1216

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    开关管 (S)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    130MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SA1647,2SB930A,

  • 最大耗散功率:

    20W

  • 放大倍数:

  • 图片代号:

    A-80

  • vtest:

    120

  • htest:

    130000000

  • atest:

    4

  • wtest:

    20

详细参数

  • 型号:

    2SB1216

  • 功能描述:

    两极晶体管 - BJT BIP PNP 4A 100V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
SANYO/三洋
TO252
7906200
询价
SANYO
360000
原厂原装
1305
询价
ROHM
08PB
60000
询价
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
SANYO
19+
TO-252
59187
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
23+
N/A
38460
正品授权货源可靠
询价
SANYO/三洋
1833+
SOT252
410
原装现货!天天特价!随时可以货!
询价
NEC
23+
TO-252
33500
全新原装真实库存含13点增值税票!
询价
SANYO
2020+
TO-252
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
SANYO
14+
TO-252
54500
百分百原装正品现货
询价
更多2SB1216供应商 更新时间2024-4-28 16:18:00