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2SB1201

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

文件:388.23 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

2SB1201

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam

文件:123.84 Kbytes 页数:4 Pages

SANYO

三洋

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

文件:252.08 Kbytes 页数:3 Pages

ISC

无锡固电

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

文件:359.46 Kbytes 页数:2 Pages

ISC

无锡固电

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

文件:327.4 Kbytes 页数:2 Pages

ISC

无锡固电

2SB1201

High-Current Switching Applications

■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801

文件:47.23 Kbytes 页数:2 Pages

KEXIN

科信电子

2SB1201-251

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

文件:359.46 Kbytes 页数:2 Pages

ISC

无锡固电

2SB1201-252

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

文件:327.4 Kbytes 页数:2 Pages

ISC

无锡固电

2SB1201S-E

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

文件:347.77 Kbytes 页数:2 Pages

ISC

无锡固电

2SB1201S-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

文件:388.23 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

晶体管资料

  • 型号:

    2SB1217

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    3A

  • 最大工作频率:

    50MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SA1096,2SA1359,2SB986,2SB1065,

  • 最大耗散功率:

    10W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    60

  • htest:

    50000000

  • atest:

    3

  • wtest:

    10

技术参数

  • NPN/PNP:

    PNP

  • Vcbo (V):

    -60

  • VCEO (V):

    -60

  • Vebo (V):

    -7

  • IC (A) @25 °C:

    -3

  • VCE(sat) (V) max.:

    -0.3

  • hFE min.:

    100

  • hFE max.:

    400

  • Pc (W):

    10

  • fT (MHz) typ.:

    50

  • Cob (pF) typ.:

    40

  • Package Type:

    MP-5

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
NEC
25+
TO-126
6500
十七年专营原装现货一手货源,样品免费送
询价
RENESAS/瑞萨
24+
TO-126
10000
只有原装
询价
24+
TP-220F
10000
全新
询价
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MAT
16+
TO-220
100000
全新原装现货
询价
NEC
24+
6540
原装现货/欢迎来电咨询
询价
NEC
23+
TO-126
3000
原装正品假一罚百!可开增票!
询价
RENESAS/瑞萨
23+
TO-126
50000
全新原装正品现货,支持订货
询价
NEC
22+
TO-126
6000
十年配单,只做原装
询价
NEC
25+
126
8880
原装认准芯泽盛世!
询价
更多2SB12供应商 更新时间2025-12-21 9:38:00