2SB1198

Low-frequencyTransistor(-80V,-0.5A)

Features 1)LowVCE(sat).VCE(sat)=
0.2V(Typ.)(IC/IB=
0.5A/
50mA) 2)Highbreakdownvoltage.BVCEO=
80V 3)Complementsthe2SD1782K.

2SB1198

LOWFREQUENCYPNPTRANSISTOR

DESCRIPTION TheUTC2SB1198isanepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltage:BVCEO=-80V *LowVCE(sat):VCE(sat)=-0.2V(Typ)(Ic/IB=-0.5A/-50mA)

2SB1198

LOWFREQUENCYPNPTRANSISTOR

2SB1198

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●Highbreakdownvoltage

2SB1198

SOT-23Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) Highbreakdownvoltage

2SB1198K

PNPSiliconEpitaxialPlanarTransistor

2SB1198K

PNPTransistors

2SB1198K

Low-frequencyTransistor(-80V,-0.5A)

2SB1198K

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highbreakdown,lowVCE(sat),complementsthe2SD1782K. Applications Mediumpoweramplifierapplications.

2SB1198K

PNPSiliconGeneralPurposeTransistor

FEATURES PowerdissipationPCM:0.2W CollectorcurrentICM:-0.5A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJTstg:-55°Cto+150°C

2SB1198K

Low-frequencyTransistor(-80V,-0.5A)

Features 1)LowVCE(sat).VCE(sat)=
0.2V(Typ.)(IC/IB=
0.5A/
50mA) 2)Highbreakdownvoltage.BVCEO=
80V 3)Complementsthe2SD1782K.

2SB1198KFRA

PowerTransistor(-80V,-500mA)

Features 1)LowVCE(sat) VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA) 2)Highbreakdownvoltage. BVCEO=-80V 3)Complementsthe2SD1782KFRA. Application DRIVER

2SB1198SQ

PNPTransistor