2SB1120

PNPEpitaxialPlanarSiliconTransistors

Features ●Lowcollector-to-emittersaturationvoltage: VCE(sat)max=-0.45V. ●Largecurrentcapacity:IC=-2.5A,ICP=-5A. ●Verysmallsizemakingiteasytoprovidehighdensity, small-sizedhybridIC’s.

2SB1120

High-CurrentDriverApplications

Features •Lowcollector-to-emittersaturationvoltage: VCE(sat)max=–0.45V. •Largecurrentcapacity:IC=–2.5A,ICP=–5A. •Verysmallsizemakingiteasytoprovidehigh density,small-sizedhybridIC’s. Applications •Strobes,voltageregulators,relaydrivers,lampdrivers.

2SB1120-E

PNPTransistors

■Features ●Verysmallsizemakingiteasytoprovidehigh highdensity,small-sizedhybridIC’s. ●Lowcollector-to-emittersaturationvoltage ●Largecurrentcapacity:IC=–2.5A,ICP=–5A.

2SB1120-F

PNPTransistors

■Features ●Verysmallsizemakingiteasytoprovidehigh highdensity,small-sizedhybridIC’s. ●Lowcollector-to-emittersaturationvoltage ●Largecurrentcapacity:IC=–2.5A,ICP=–5A.

2SB1120-G

PNPTransistors

■Features ●Verysmallsizemakingiteasytoprovidehigh highdensity,small-sizedhybridIC’s. ●Lowcollector-to-emittersaturationvoltage ●Largecurrentcapacity:IC=–2.5A,ICP=–5A.