2SB1119

LF Amp,Electronic Governor Applications

LFAmplifier,ElectronicGovernorApplications Features ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

2SB1119

Plastic-Encapsulated Transistors

FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:-1A Collectorcurrent(Pulse) ICP:-2A Collector-basevoltage V(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SB1119

PNP Epitaxial Planar Silicon Transistors

Features ●Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

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PNP Silicon Medium Power Transistor

FEATURES Powerdissipation PCM:500mW˄Tamb=25°C Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55ćto+150ć

2SB1119

TRANSISTOR(PNP)

FEATURES ●SmallFlatPackage ●LFAmplifier,ElectronicGovernorApplications

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丝印：BB；Package：SOT-89；PNP Epitaxial Planar Silicon Transistors

FEATURES ●VerysmallsizemakingiteasytoprovideHigh-density,small-sizehybridIC’s.

2SB1119

Very small size making it easy to provide

FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridICS

2SB1119

Plastic-Encapsulate Transistors

FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridIC,S

2SB1119

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelowvoltagepowersupply.

2SB1119

PNP Epitaxial Planar Silicon Transistor

Features Verysmallsizemakingiteasytoprovidehighdensity, small-sizedhybridIC’s.