TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

文件：213.16 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

文件：291.82 Kbytes 页数：4 Pages

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

文件：267.54 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f noi

文件：161.85 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low noise, high DC current gain, high breakdown voltage. Applications Low noise audio amplifier applications.

文件：977.29 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

文件：267.54 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

文件：291.82 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters

文件：155.73 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters

文件：154.63 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters

文件：110.81 Kbytes 页数：3 Pages

SAVANTIC