SILICON EPITAXIAL PLANAR

Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 ■ Features • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209

文件：109.71 Kbytes 页数：3 Pages

Panasonic

松下

For low-frequency power amplification

Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 ■ Features • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209

文件：80.5 Kbytes 页数：4 Pages

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SC2209 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

文件：181.12 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SC2209 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

文件：196.21 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SC2209 • High collector power dissipation APPLICATIONS • For low-frequency power amplification

文件：136.11 Kbytes 页数：4 Pages

SAVANTIC

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SC2235.

文件：173.33 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

-0.8A , -120V PNP Plastic Encapsulated Transistor

FEATURES • Complementary to 2SC2235 • Power Amplifier Applications

文件：84.1 Kbytes 页数：1 Pages

SECOS

喜可士

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.67 Kbytes 页数：1 Pages

TEL

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.9 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.63 Kbytes 页数：1 Pages

WINNERJOIN

永而佳