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2SA2207

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:276.35 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2207

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:295.39 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2207

PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulators, drive circuit).

文件:59.42 Kbytes 页数:4 Pages

SANYO

三洋

2SA2207-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:295.39 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2207-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:276.35 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2209

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:276.06 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2209

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:295.1 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2209

PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

文件:60.2 Kbytes 页数:4 Pages

SANYO

三洋

2SA2209-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:295.1 Kbytes 页数:2 Pages

ISC

无锡固电

2SA2209-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:276.06 Kbytes 页数:2 Pages

ISC

无锡固电

详细参数

  • 型号:

    2SA220

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
TO-251
6000
十年配单,只做原装
询价
ONSemiconductor
24+
NA
3566
进口原装正品优势供应
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
三年内
1983
只做原装正品
询价
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ON
25+
TO252-3
3675
就找我吧!--邀您体验愉快问购元件!
询价
ON/安森美
25+
NA
30000
房间原装现货特价热卖,有单详谈
询价
ON/安森美
23+
NA
13300
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
询价
ON/安森美
22+
N/A
13300
现货,原厂原装假一罚十!
询价
SANYO/三洋
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
更多2SA220供应商 更新时间2026-3-10 14:02:00