Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.)@IC= -0.3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.

文件：354.81 Kbytes 页数：3 Pages

ISC

无锡固电

High Voltage Switching Applications

文件：213 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：2SA2184；Package：TO-252；Silicon Power Transistor

Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.

文件：776.41 Kbytes 页数：4 Pages

COMCHIP

典琦

Power transistor for high-speed switching applications

Application Scope：High voltage switching\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -1 A \nCollector Current ICP -2 A \nCollector power dissipation PC 20 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -550 V ;

Toshiba

东芝

General Purpose Transistor

Comchip

典琦